Edge absorption and circular photogalvanic effect in 2D topological insulator edges
- 作者: Entin M.V.1,2, Magarill L.I.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 103, 编号 11 (2016)
- 页面: 711-716
- 栏目: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159428
- DOI: https://doi.org/10.1134/S0021364016110047
- ID: 159428
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详细
The electron absorption on the edge states and the edge photocurrent of a 2D topological insulator (TI) are studied. We consider the optical transitions within linear edge branches of the energy spectrum. The interaction with impurities is taken into account. The circular polarization is found to produce the edge photocurrent, the direction of which is determined by light polarization and edge orientation.
作者简介
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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