Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
- Авторы: Abramkin D.S.1,2, Rumynin K.M.1,2, Bakarov A.K.1, Kolotovkina D.A.1,2, Gutakovskii A.K.1,2, Shamirzaev T.S.1,2,3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Ural Federal University
- Выпуск: Том 103, № 11 (2016)
- Страницы: 692-698
- Раздел: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159414
- DOI: https://doi.org/10.1134/S0021364016110023
- ID: 159414
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Аннотация
The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect XXY valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect X valley of the conduction band of the AlAs matrix.
Об авторах
D. Abramkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
K. Rumynin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Bakarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090
D. Kolotovkina
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Gutakovskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
T. Shamirzaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Россия, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090; ul. Mira 19, Yekaterinburg, 620002
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