Edge excitons in a 2D topological insulator in a magnetic field


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Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.

作者简介

M. Entin

Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

L. Magarill

Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

M. Mahmoodian

Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: entin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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