Investigation of the operation of a bipolar transistor in the mode of a nanosecond opening switch
- 作者: Grekhov I.V.1, Rozhkov A.V.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 59, 编号 1 (2016)
- 页面: 82-83
- 栏目: Electronics and Radio Engineering
- URL: https://journals.rcsi.science/0020-4412/article/view/158911
- DOI: https://doi.org/10.1134/S002044121601022X
- ID: 158911
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详细
The results of an experimental study of the operating mode of a high-voltage bipolar transistor are presented. This mode provides an abrupt (nanosecond-duration) recovery of the blocking ability of the collector in a common-base circuit and the formation of high-voltage pulses with a nanosecond rise time.
作者简介
I. Grekhov
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Rozhkov
Ioffe Physical–Technical Institute
Email: grekhov@mail.ioffe.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
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