A silicon field-effect hall sensor with an extended operating temperature range

Аннотация

The characteristics of thin-film Si MISIM magnetic transistors with a built-in accumulated channel and partially depleted quasi-neutral area are studied. The design of transistors is integrated with a Hall element. It is shown experimentally that transistors of this type, which were named field-effect Hall sensors (FEHSs) and made by the “silicon-on-insulator” (SOI) technology, provide measurements of the magnetic induction in a temperature range of 1.7–605 K. Theoretical estimates show that the upper operating temperature limit of the FEHS can be about 850 K.