A Multirange Photodetector Based on the Effect of Photon Dragging Current Carriers in Germanium for High-Power Lasers in the Infrared Range


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Abstract

A highly efficient model of a photodetector based on the effect of dragging free current carriers by photons in semiconductors is proposed, which makes it possible to quickly change the working length of a crystal element. In this case, it is possible to expand the range of measured pulse durations by reducing or increasing the photodetector sensitivity.

About the authors

V. E. Rogalin

Institute of Electrophysics and Electric Power, Russian Academy of Sciences; Tver State University

Email: kaplunov.ia@tversu.ru
Russian Federation, St. Petersburg, 191186 ; Tver, 170100

S. A. Filin

Plekhanov Russian Economical University

Email: kaplunov.ia@tversu.ru
Russian Federation, Moscow, 117997

I. A. Kaplunov

Institute of Electrophysics and Electric Power, Russian Academy of Sciences; Tver State University

Author for correspondence.
Email: kaplunov.ia@tversu.ru
Russian Federation, St. Petersburg, 191186 ; Tver, 170100

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