Email this article Investigation of Power Transistor Parameters for Designing High-Frequency High-Voltage Nanosecond Switches
- Authors: Moshkunov S.I.1, Rebrov I.E.1, Khomich V.Y.1, Shershunova E.A.1
-
Affiliations:
- Institute for Electrophysics and Electric Power, Russian Academy of Sciences
- Issue: Vol 61, No 6 (2018)
- Pages: 821-826
- Section: Electronics and Radio Engineering
- URL: https://journals.rcsi.science/0020-4412/article/view/160465
- DOI: https://doi.org/10.1134/S0020441218050214
- ID: 160465
Cite item
Open Access
Access granted
Subscription Access
Abstract
The efficiency of power transistors in composite high-voltage switches is analyzed. A high-voltage pulse generator capable of generating a periodic voltage signal with a rectangular shape, an amplitude as high as 16 kV, a current greater than 40 A, and a repetition rate of up to 100 kHz has been developed.
About the authors
S. I. Moshkunov
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: rbrv.igor@gmail.com
Russian Federation, St. Petersburg, 191186
I. E. Rebrov
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Author for correspondence.
Email: rbrv.igor@gmail.com
Russian Federation, St. Petersburg, 191186
V. Yu. Khomich
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: rbrv.igor@gmail.com
Russian Federation, St. Petersburg, 191186
E. A. Shershunova
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: rbrv.igor@gmail.com
Russian Federation, St. Petersburg, 191186
Supplementary files
