Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays


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The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a pn junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by 57Co and 241Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.

作者简介

S. Chernykh

National University of Science and Technology MISiS

编辑信件的主要联系方式.
Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049

A. Chernykh

National University of Science and Technology MISiS

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049

A. Chubenko

National University of Science and Technology MISiS; Lebedev Physical Institute

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049; Moscow, 119991

L. Pavlyuchenko

Lebedev Physical Institute

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119991

Yu. Sveshnikov

JSC Elma-Malakhit–JSC Concern Energomera

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 124460

Yu. Glybin

LLC SNIIP-Plus

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 123060

M. Konovalov

National University of Science and Technology MISiS

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049

A. Panichkin

National University of Science and Technology MISiS

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049

S. Didenko

National University of Science and Technology MISiS

Email: chsv_84@mail.ru
俄罗斯联邦, Moscow, 119049

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