Email this article Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors
- Authors: Malashin M.V.1, Moshkunov S.I.1, Khomich V.Y.1
-
Affiliations:
- Institute for Electrophysics and Electric Power
- Issue: Vol 59, No 2 (2016)
- Pages: 222-225
- Section: Electronics and Radio Engineering
- URL: https://journals.rcsi.science/0020-4412/article/view/158941
- DOI: https://doi.org/10.1134/S0020441216020081
- ID: 158941
Cite item
Open Access
Access granted
Subscription Access
Abstract
The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.
About the authors
M. V. Malashin
Institute for Electrophysics and Electric Power
Author for correspondence.
Email: m_malashin@mail.ru
Russian Federation, Dvortsovaya nab. 18, St. Petersburg, 191186
S. I. Moshkunov
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Russian Federation, Dvortsovaya nab. 18, St. Petersburg, 191186
V. Yu. Khomich
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Russian Federation, Dvortsovaya nab. 18, St. Petersburg, 191186
Supplementary files
