An a-C/n-Si heterostructure as an ionizing radiation detector
- Authors: Avjyan K.E.1, Matevosyan L.A.1, Ohanyan K.S.2, Petrosyan L.G.2
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Affiliations:
- Institute of Radiophysics and Electronics
- Yerevan State University
- Issue: Vol 59, No 1 (2016)
- Pages: 60-62
- Section: Nuclear Experimental Technique
- URL: https://journals.rcsi.science/0020-4412/article/view/158908
- DOI: https://doi.org/10.1134/S002044121601019X
- ID: 158908
Cite item
Abstract
The use of a vacuum pulsed-deposited heterostructure—amorphous carbon films on n-type silicon (a-C/n-Si)—as an ionizing radiation detector has been investigated.
About the authors
K. E. Avjyan
Institute of Radiophysics and Electronics
Email: kohanyan@ysu.am
Armenia, ul. Brat’ev Alikhanyanov 1, Ashtarak-2, Yerevan, 0203
L. A. Matevosyan
Institute of Radiophysics and Electronics
Email: kohanyan@ysu.am
Armenia, ul. Brat’ev Alikhanyanov 1, Ashtarak-2, Yerevan, 0203
K. S. Ohanyan
Yerevan State University
Author for correspondence.
Email: kohanyan@ysu.am
Armenia, ul. Aleka Manukyana 1, Yerevan, 0025
L. G. Petrosyan
Yerevan State University
Email: kohanyan@ysu.am
Armenia, ul. Aleka Manukyana 1, Yerevan, 0025
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