Preparation of Ti3SiC2 through reduction of titanium dioxide with silicon carbide

Abstract

This paper describes the reduction of titanium dioxide with a mixture of silicon carbide and silicon powders at a temperature of 1550°C under vacuum. It has been shown that the use of the combined reductant enables the preparation of the ternary phase Ti₃SiC₂ through concurrent carboand silicothermic processes. The optimal compositions for Ti₃SiC₂ formation are TiO₂ + (1.5–x)SiC + 2xSi with x = 0.4–0.5. The Ti₃SiC₂ yield then reaches 96 wt %.