One-Step Synthesis of a Hybrid of Graphene Films and Ribbons
- Autores: Matveev V.N.1, Volkov V.T.1, Levashov V.I.1, Kononenko O.V.1, Khodos I.I.1
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Afiliações:
- Institute of Microelectronics Technology and High Purity Materials
- Edição: Volume 54, Nº 3 (2018)
- Páginas: 229-232
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158415
- DOI: https://doi.org/10.1134/S002016851803010X
- ID: 158415
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Resumo
Hybrid structures composed of graphene films and (0001) graphene ribbons perpendicular to the surface of a graphene-like film have been produced through the catalytic decomposition of a carbon-containing gas on an Al-coated SiO2/Si substrate having Ni catalyst islands on its surface. A hybrid structure has been grown by a one-step chemical vapor deposition process, by admitting acetylene into a chamber for a short time. The hybrid structures thus produced have been used to fabricate Hall sensors with a sensitivity of 3000 Ω/T. The synthesized hybrid structures are potential candidates for use in nanoelectronic devices, energy storage systems, etc. The technique proposed for the growth of such films is compatible with technologies that are employed in the electronics industry.
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Sobre autores
V. Matveev
Institute of Microelectronics Technology and High Purity Materials
Autor responsável pela correspondência
Email: matveev@iptm.ru
Rússia, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
V. Volkov
Institute of Microelectronics Technology and High Purity Materials
Email: matveev@iptm.ru
Rússia, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
V. Levashov
Institute of Microelectronics Technology and High Purity Materials
Email: matveev@iptm.ru
Rússia, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
O. Kononenko
Institute of Microelectronics Technology and High Purity Materials
Email: matveev@iptm.ru
Rússia, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
I. Khodos
Institute of Microelectronics Technology and High Purity Materials
Email: matveev@iptm.ru
Rússia, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
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