ICP-AES analysis of silicon, germanium, and their oxides

Аннотация

The techniques of atomic emission spectrometry with inductively coupled plasma (ICP-AES) for quantitative determination impurities in silicon, germanium, and their dioxides are developed. Analytical lines for silicon-matrix (29 trace elements) and germanium-matrix (42 trace elements) are selected. Matrix interferences caused by the presence of silicon and germanium in the solutions are studied. The optimal concentrations of matrix are determined. LODs for trace elements are in the range from n × 10^–7 to n × 10^–5 wt %; RSD < 20%. The accuracy of the results is confirmed by the method of “introduced–found.” The developed techniques are express, simple, and can determine a broad range of trace elements.