On the Visualization of the Magnetoelectric Coupling Region for a Thin Ferromagnetic Layer on a Ferroelectric Substrate


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Abstract

Scanning electron microscopy results demonstrate that coupling of the ferromagnetic and ferroelectric components in a Co/PbZr0.45Ti0.55O3/Co thin-film structure, resulting in a considerable magnitude (several to tens of mV/A) of a low-frequency magnetoelectric effect at room temperature, extends to a depth of up to 20 μm. This makes it possible to optimize the thickness of the PbZr0.45Ti0.55O3 substrate and enhance the performance of such structures for use as sensing elements in information storage/processing devices and magnetic field sensors based on the magnetoelectric effect.

About the authors

A. I. Stognij

Scientific–Practical Materials Research Centre, Belarussian Academy of Sciences

Author for correspondence.
Email: stognij@ifttp.bas-net.by
Belarus, vul. Brovki 19, Minsk, 220072

N. N. Novitskii

Scientific–Practical Materials Research Centre, Belarussian Academy of Sciences

Email: stognij@ifttp.bas-net.by
Belarus, vul. Brovki 19, Minsk, 220072

S. A. Sharko

Scientific–Practical Materials Research Centre, Belarussian Academy of Sciences

Email: stognij@ifttp.bas-net.by
Belarus, vul. Brovki 19, Minsk, 220072

A. V. Bespalov

Moscow State Institute of Radio Engineering, Electronics, and Automation, Moscow Technological University

Email: stognij@ifttp.bas-net.by
Russian Federation, pr. Vernadskogo 78, Moscow, 119454

O. L. Golikova

Moscow State Institute of Radio Engineering, Electronics, and Automation, Moscow Technological University

Email: stognij@ifttp.bas-net.by
Russian Federation, pr. Vernadskogo 78, Moscow, 119454

M. N. Smirnova

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: stognij@ifttp.bas-net.by
Russian Federation, Leninskii pr. 31, Moscow, 119991

V. A. Ketsko

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: stognij@ifttp.bas-net.by
Russian Federation, Leninskii pr. 31, Moscow, 119991

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