Oriented In3–xS4 films on the (100) surface of Si, GaAs, and InP single crystals

Abstract

Spray pyrolysis of aqueous solutions, with thiourea as a sulfurizing agent, has been used to grow cubic indium sulfide films on single-crystal substrates: In_3–xS₄(111)/Si(100), In_3–xS₄(111)/GaAs(100), and In_3–xS₄(111)/InP(100). The lattice parameter a of the sulfide has been shown to increase with an increase in the lattice parameter of the substrate, whereas the film grown on GaAs has the highest lattice strain (as assessed from X-ray diffraction line broadening). The films have a constant phase composition and (111) texture, in contrast to films grown on glassy substrates by the same method.