Email this article Anti-stokes luminescence of CsCdBr3:Tm crystals
- Authors: Gruzintsev A.N.1
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Affiliations:
- Institute of Microelectronics Technology and High Purity Materials
- Issue: Vol 53, No 4 (2017)
- Pages: 386-390
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158201
- DOI: https://doi.org/10.1134/S0020168517040045
- ID: 158201
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Abstract
Transmission and spontaneous photoluminescence excitation spectra of CsCdBr3:Tm (1 and 2.5 at % Tm) crystals have been studied under different optical pumping conditions. The results demonstrate that the anti-Stokes luminescence intensity in the thulium-doped crystals is higher at the higher doping level. We have determined the resonance wavelengths of IR photons for two-photon excitation of visible luminescence in CsCdBr3:Tm and identified the corresponding electronic transitions in thulium-related emission centers for Stokes and anti-Stokes luminescence.
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About the authors
A. N. Gruzintsev
Institute of Microelectronics Technology and High Purity Materials
Author for correspondence.
Email: gran@iptm.ru
Russian Federation, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432
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