Generation of a metal porous film by arc discharge

Аннотация

The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters under optimal conditions (at a distance of 2 mm from the discharge) is about 0.5 μm, and the deposition density is 3–5 clusters per squared μm.