Formation of an Absorbing Layer and Superfast Gallium Arsenide Transition in the Metal State under the Action of Femtosecond Laser Pulses
- 作者: Ashitkov S.I.1, Ovchinnikov A.V.1, Sitnikov D.S.1, Agranat M.B.1
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隶属关系:
- Joint Institute for High Temperatures, Russian Academy of Sciences
- 期: 卷 57, 编号 6 (2019)
- 页面: 859-862
- 栏目: Thermophysical Properties of Materials
- URL: https://journals.rcsi.science/0018-151X/article/view/158121
- DOI: https://doi.org/10.1134/S0018151X19060038
- ID: 158121
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详细
It has been shown experimentally that an electron-hole plasma forms in the surface layer at a depth of ~30 nm, followed by a transition to the metallic state, when GaAs is exposed to femtosecond laser pulses with an intensity close to the melting threshold. This phenomenon is observed when laser pulses with photon energies are both smaller and larger than the band gap. The formation of an electron-hole plasma and an absorbing layer with metallic properties is mainly due to the mechanism of avalanche ionization by electron impact.
作者简介
S. Ashitkov
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: a.ovtch@gmail.com
俄罗斯联邦, Moscow, 125412
A. Ovchinnikov
Joint Institute for High Temperatures, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: a.ovtch@gmail.com
俄罗斯联邦, Moscow, 125412
D. Sitnikov
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: a.ovtch@gmail.com
俄罗斯联邦, Moscow, 125412
M. Agranat
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: a.ovtch@gmail.com
俄罗斯联邦, Moscow, 125412
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