Thin films of palladium oxide for gas sensors

Abstract

Thin films of PdO obtained by thermal oxidation of Pd films in air in the temperature range of 240–800°C were characterized using fast electron diffraction, transmission electron microscopy, and optical spectroscopy. The PdO films were found to be non-stoichiometric. With increasing oxidation temperature, the deviation of the PdO film composition from the stoichiometric component ratio becomes less pronounced. The resistivity response of PdO films to the presence of ozone in air was studied for the first time and good prospects for using this material for gas sensors are demonstrated.