A model of the mechanism of the chemical interaction of the etchant ion (HF 2 ) –  with silicon during its electrochemical etching in hydrofluoric acid solutions

E. N. Abramova; A. M. Khort; A. A. Gvelesiani; A. G. Yakovenko; V. I. Shvets

doi:10.1134/S0012500816090044

A model of the mechanism of the chemical interaction of the etchant ion (HF₂)^– with silicon during its electrochemical etching in hydrofluoric acid solutions

作者: Abramova E.N.¹, Khort A.M.¹, Gvelesiani A.A.¹, Yakovenko A.G.¹, Shvets V.I.¹
隶属关系:
1. Institute of Fine Chemical Technologies
期: 卷 470, 编号 1 (2016)
页面: 252-254
栏目: Chemistry
URL: https://journals.rcsi.science/0012-5008/article/view/153754
DOI: https://doi.org/10.1134/S0012500816090044
ID: 153754

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详细

A model was proposed for the mechanism of the chemical interaction of the etchant ion (HF₂)^– with silicon during its electrochemical etching, which explains the possibility of porous silicon etching in the dark and the formation of hydride and hydroxyl groups on the silicon surface.