Silicon pressure transmitters with overload protection
- 作者: Andreev K.A.1, Vlasov A.I.1, Shakhnov V.A.1
- 
							隶属关系: 
							- Bauman Moscow State University
 
- 期: 卷 77, 编号 7 (2016)
- 页面: 1281-1285
- 栏目: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150391
- DOI: https://doi.org/10.1134/S0005117916070146
- ID: 150391
如何引用文章
详细
The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.
作者简介
K. Andreev
Bauman Moscow State University
							编辑信件的主要联系方式.
							Email: kost87@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow						
A. Vlasov
Bauman Moscow State University
														Email: kost87@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow						
V. Shakhnov
Bauman Moscow State University
														Email: kost87@mail.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow						
补充文件
 
				
			 
						 
						 
					 
						 
						 
				 
  
  
  
  
  电邮这篇文章
			电邮这篇文章  开放存取
		                                开放存取 ##reader.subscriptionAccessGranted##
						##reader.subscriptionAccessGranted## 订阅存取
		                                		                                        订阅存取
		                                					