Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements

B. I. Podlepetsky; A. S. Bakerenkov; Yu. V. Sukhoroslova

doi:10.1134/S0005117918010150

Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements

Authors: Podlepetsky B.I.¹, Bakerenkov A.S.¹, Sukhoroslova Y.V.¹
Affiliations:
1. National Research Nuclear University MEPhI
Issue: Vol 79, No 1 (2018)
Pages: 180-189
Section: Sensors and Systems
URL: https://journals.rcsi.science/0005-1179/article/view/150777
DOI: https://doi.org/10.1134/S0005117918010150
ID: 150777

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Abstract

The technique of estimating the parameters models of MISTs (the field-effect transistors with metal-insulator-semiconductor structures) is proposed to predict the radiation sensitivity of the sensors based on MISTs. The technique allows distinguishing the contributions of charges in the insulator and the surface states, taking into account the effect of irradiation modes on the transistor characteristics.