Отправить статью по E-mail Photosensors Based on Neutron Doped Silicon
- Авторы: Tashmetov M.Y.1, Makhmudov S.A.1, Sulaymonov A.A.1, Rafikov A.K.1, Abdurayimov B.Z.1
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Учреждения:
- Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
- Выпуск: Том 55, № 1 (2019)
- Страницы: 71-73
- Раздел: Brief Communications
- URL: https://journals.rcsi.science/0003-701X/article/view/149609
- DOI: https://doi.org/10.3103/S0003701X19010134
- ID: 149609
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Аннотация
The problem of preparing a compensated material is solved by the radiation technology method (by irradiating the silicon single-crystal with fast neutrons), which makes it possible to intentionally change the photoelectric parameters of silicon. The changes in the photoelectric parameters of the compensated samples are monitored by measuring the Rd/Rl ratio, and the possibility of creating photo and thermal sensors with identical characteristics, operating within the temperature range of 30 to 100°C, is shown.
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Об авторах
M. Tashmetov
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
Автор, ответственный за переписку.
Email: mannap@inp.uz
Узбекистан, Tashkent, 702132
Sh. Makhmudov
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
Email: mannap@inp.uz
Узбекистан, Tashkent, 702132
A. Sulaymonov
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
Email: mannap@inp.uz
Узбекистан, Tashkent, 702132
A. Rafikov
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
Email: mannap@inp.uz
Узбекистан, Tashkent, 702132
B. Abdurayimov
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan
Email: mannap@inp.uz
Узбекистан, Tashkent, 702132
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