Photosensors Based on Neutron Doped Silicon


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详细

The problem of preparing a compensated material is solved by the radiation technology method (by irradiating the silicon single-crystal with fast neutrons), which makes it possible to intentionally change the photoelectric parameters of silicon. The changes in the photoelectric parameters of the compensated samples are monitored by measuring the Rd/Rl ratio, and the possibility of creating photo and thermal sensors with identical characteristics, operating within the temperature range of 30 to 100°C, is shown.

作者简介

M. Tashmetov

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan

编辑信件的主要联系方式.
Email: mannap@inp.uz
乌兹别克斯坦, Tashkent, 702132

Sh. Makhmudov

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan

Email: mannap@inp.uz
乌兹别克斯坦, Tashkent, 702132

A. Sulaymonov

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan

Email: mannap@inp.uz
乌兹别克斯坦, Tashkent, 702132

A. Rafikov

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan

Email: mannap@inp.uz
乌兹别克斯坦, Tashkent, 702132

B. Abdurayimov

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan

Email: mannap@inp.uz
乌兹别克斯坦, Tashkent, 702132

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