Отправить статью по E-mail Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots
- Авторы: Saidov A.S.1, Usmonov S.N.1, Amonov K.A.1, Saidov M.S.1, Kutlimuratov B.R.2
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Учреждения:
- Physics–Sun Scientific and Production Association, Institute of Physics and Technology
- Islam Karimov State Technical University
- Выпуск: Том 53, № 4 (2017)
- Страницы: 287-290
- Раздел: Direct Solar Energy Conversion into Electrical Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149331
- DOI: https://doi.org/10.3103/S0003701X17040132
- ID: 149331
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Аннотация
The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2)x(ZnSe)y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.
Об авторах
A. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Автор, ответственный за переписку.
Email: amin@uzsci.uz
Узбекистан, Tashkent, 100084
Sh. Usmonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Автор, ответственный за переписку.
Email: kvant@mail.ru
Узбекистан, Tashkent, 100084
K. Amonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Узбекистан, Tashkent, 100084
M. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Узбекистан, Tashkent, 100084
B. Kutlimuratov
Islam Karimov State Technical University
Email: kvant@mail.ru
Узбекистан, Tashkent, 100095
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