电邮这篇文章 Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots
- 作者: Saidov A.S.1, Usmonov S.N.1, Amonov K.A.1, Saidov M.S.1, Kutlimuratov B.R.2
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隶属关系:
- Physics–Sun Scientific and Production Association, Institute of Physics and Technology
- Islam Karimov State Technical University
- 期: 卷 53, 编号 4 (2017)
- 页面: 287-290
- 栏目: Direct Solar Energy Conversion into Electrical Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149331
- DOI: https://doi.org/10.3103/S0003701X17040132
- ID: 149331
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详细
The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2)x(ZnSe)y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.
作者简介
A. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
编辑信件的主要联系方式.
Email: amin@uzsci.uz
乌兹别克斯坦, Tashkent, 100084
Sh. Usmonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
编辑信件的主要联系方式.
Email: kvant@mail.ru
乌兹别克斯坦, Tashkent, 100084
K. Amonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
乌兹别克斯坦, Tashkent, 100084
M. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
乌兹别克斯坦, Tashkent, 100084
B. Kutlimuratov
Islam Karimov State Technical University
Email: kvant@mail.ru
乌兹别克斯坦, Tashkent, 100095
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