Мақаланы E-mail арқылы жіберу Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots
- Авторлар: Saidov A.S.1, Usmonov S.N.1, Amonov K.A.1, Saidov M.S.1, Kutlimuratov B.R.2
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Мекемелер:
- Physics–Sun Scientific and Production Association, Institute of Physics and Technology
- Islam Karimov State Technical University
- Шығарылым: Том 53, № 4 (2017)
- Беттер: 287-290
- Бөлім: Direct Solar Energy Conversion into Electrical Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149331
- DOI: https://doi.org/10.3103/S0003701X17040132
- ID: 149331
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Аннотация
The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2)x(ZnSe)y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.
Авторлар туралы
A. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Хат алмасуға жауапты Автор.
Email: amin@uzsci.uz
Өзбекстан, Tashkent, 100084
Sh. Usmonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Хат алмасуға жауапты Автор.
Email: kvant@mail.ru
Өзбекстан, Tashkent, 100084
K. Amonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Өзбекстан, Tashkent, 100084
M. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Өзбекстан, Tashkent, 100084
B. Kutlimuratov
Islam Karimov State Technical University
Email: kvant@mail.ru
Өзбекстан, Tashkent, 100095
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