Enviar artigo por via de e-mail Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x(Si2)x and nGaAs–p(InSb)1–x(Sn2)x heterostructures
- Autores: Usmonov S.N.1
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Afiliações:
- Physical–Technical Institute, Scientific Association “Physics–Sun”
- Edição: Volume 52, Nº 3 (2016)
- Páginas: 211-214
- Seção: Direct Conversion of Solar Energy into Electric Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149179
- DOI: https://doi.org/10.3103/S0003701X16030178
- ID: 149179
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Resumo
The spectral dependences of heterostructures pSi–n(GaSb)1–x(Si2)x (0 ≤ х ≤ 0.07) and nGaAs–p(InSb)1–x(Sn2)x (0 ≤ х ≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of GaAs molecules in the studied structures is assessed and its dependence on the width of the band gap and parameter of the lattice of the basic semiconductor are found.
Sobre autores
Sh. Usmonov
Physical–Technical Institute, Scientific Association “Physics–Sun”
Autor responsável pela correspondência
Email: sh_usmonov@rambler.ru
Uzbequistão, Tashkent, 100084
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