Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x(Si2)x and nGaAs–p(InSb)1–x(Sn2)x heterostructures
- 作者: Usmonov S.N.1
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隶属关系:
- Physical–Technical Institute, Scientific Association “Physics–Sun”
- 期: 卷 52, 编号 3 (2016)
- 页面: 211-214
- 栏目: Direct Conversion of Solar Energy into Electric Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149179
- DOI: https://doi.org/10.3103/S0003701X16030178
- ID: 149179
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The spectral dependences of heterostructures pSi–n(GaSb)1–x(Si2)x (0 ≤ х ≤ 0.07) and nGaAs–p(InSb)1–x(Sn2)x (0 ≤ х ≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of GaAs molecules in the studied structures is assessed and its dependence on the width of the band gap and parameter of the lattice of the basic semiconductor are found.
作者简介
Sh. Usmonov
Physical–Technical Institute, Scientific Association “Physics–Sun”
编辑信件的主要联系方式.
Email: sh_usmonov@rambler.ru
乌兹别克斯坦, Tashkent, 100084
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