Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

Abstract

The solubilities of sulfur are determined by neutron activation analysis and silicon compensation by sulfur with different concentrations of the initial boron. It is shown that the sulfur solubility at a silicon doping temperature of 1250°C is ~1.8 × 10¹⁶ cm^–3. Joint analysis of the results of studies of photoconductivity (PC) spectra, both in combined illumination with integral and infrared (IR) light and after the integral light is switched off, and the results of a study of the isothermal relaxation spectra of the capacity (DLTS) of Si❬S❭ crystals manufactured at different pressures of the diffusant vapor been established that single sulfur centers in silicon create two deep levels of E_S – 0.12 and E_S – 0.18 eV. All of the remaining energy levels of E_S – 0.27 and E_S – 0.53 eV are related to the quasi-molecules S₂ and S₄, respectively.