Email this article Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics
- Authors: Karimov A.V.1, Yodgorova D.M.1, Giyasova F.A.1, Shpilevskiy E.M.2, Usmanova N.I.1
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Affiliations:
- Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan
- Luikov Heat and Mass Transfer Institute, National Academy of Science of Belarus
- Issue: Vol 54, No 5 (2018)
- Pages: 330-332
- Section: Solar Engineering Materials Science
- URL: https://journals.rcsi.science/0003-701X/article/view/149501
- DOI: https://doi.org/10.3103/S0003701X18050109
- ID: 149501
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Abstract
The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are characterized by a weak temperature dependence of the photocurrent. As a result, there is a gradual increase in the light current, which ensures high photosensitivity values under low light.
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About the authors
A. V. Karimov
Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan
Email: feruzagfa@mail.ru
Uzbekistan, Tashkent, 100084
D. M. Yodgorova
Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan
Email: feruzagfa@mail.ru
Uzbekistan, Tashkent, 100084
F. A. Giyasova
Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan
Author for correspondence.
Email: feruzagfa@mail.ru
Uzbekistan, Tashkent, 100084
E. M. Shpilevskiy
Luikov Heat and Mass Transfer Institute, National Academy of Science of Belarus
Email: feruzagfa@mail.ru
Belarus, Minsk, 220072
N. I. Usmanova
Physical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan
Email: feruzagfa@mail.ru
Uzbekistan, Tashkent, 100084
