The thermoelectric effect in a graded-gap nSi–pSi1–xGex heterostructure

Abstract

The thermoelectric effect, i.e., generation of current and voltage under uniform heating, is for the first time observed in a graded-gap Si_1–xGe_x (0 ≤ x ≤ 1) continuous solid solution and an n–Si–p–Si_1–xGe_x heterostructure made on its basis. Currents of 0.0025–0.0035 µA and voltages of 0.05–0.3 mV have occurred in the temperature range of 40–250°C.