Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight
- Authors: Abdukadyrov M.A.1, Ganiev A.S.1, Muminov R.A.2, Abdukadyrov A.M.1
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Affiliations:
- Tashkent University of Information Technologies
- Physical-Technical Institute Physics of the Sun
- Issue: Vol 52, No 2 (2016)
- Pages: 84-85
- Section: Direct Conversion of Solar Energy to Electric Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149118
- DOI: https://doi.org/10.3103/S0003701X16020031
- ID: 149118
Cite item
Abstract
Properties of GaAs/AlxGa1–xAs heterophotoconverters fabricated on two sides of monocrystal plates from GaP and GaAs under lighting conditions by V-shaped concentrators are described. It it found that, owing to the increased transparency of the photoconverter structure with respect to thermal photons and comparatively low GaP thermal resistance, the temperature increment of the p–n junctions and relative losses of the electrical power are notably lower than for photoconverters of the same structure on the basis of GaAs.
About the authors
M. A. Abdukadyrov
Tashkent University of Information Technologies
Email: ganiyev58@mail.ru
Uzbekistan, Tashkent
A. S. Ganiev
Tashkent University of Information Technologies
Author for correspondence.
Email: ganiyev58@mail.ru
Uzbekistan, Tashkent
R. A. Muminov
Physical-Technical Institute Physics of the Sun
Email: ganiyev58@mail.ru
Uzbekistan, Tashkent
A. M. Abdukadyrov
Tashkent University of Information Technologies
Email: ganiyev58@mail.ru
Uzbekistan, Tashkent
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