On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation

Abstract

The voltage-current characteristics and electroluminescence of a light-emitting-diode (LED) n/(3C-SiC)–p/ C_DIAMOND heterostructure with white glow without phosphor created on the basis of diamond film grown by the CVD method on n/(3C-SiC) substrates with a doped level of (5–8) × 10¹⁷ cm^–3 are considered It is shown the possibility to improve the characteristics of created LED structures by their irradiation with a flux of high-energy (5 MeV) electrons of a certain dose and heat treatment.