Ar-O$_2$ plasma of resonant UHF discharge for chitosan's films processed
- Autores: Artemyev A.V.1, Kritchenkov A.S.1
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Afiliações:
- RUDN University
- Edição: Volume 33, Nº 4 (2025)
- Páginas: 461-470
- Seção: Physics and Astronomy
- URL: https://journals.rcsi.science/2658-4670/article/view/356905
- DOI: https://doi.org/10.22363//2658-4670-2025-33-4-461-470
- EDN: https://elibrary.ru/HMKEYN
- ID: 356905
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Resumo
This article explores the modification of chitosan films by treating Ar-O$_2$ with microwave plasma. The main idea is to use resonant plasma generation methods to treat chitosan films. Spectral and energy characteristics of microwave plasma are obtained. The mechanical properties, swelling, and solubility of chitosan films exposed to microwave plasma are studied. The dependence of film properties on the duration of treatment with resonant microwave plasma is demonstrated.
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Sobre autores
Andrey Artemyev
RUDN University
Email: artemyev_anvl@pfur.ru
ORCID ID: 0009-0000-1925-4711
Postgraduate Student at the Institute of Physical Research and Technology, Junior Researcher at the Institute
of Physical Research and Technology
Andrey Kritchenkov
RUDN University
Autor responsável pela correspondência
Email: kritchenkov_as@pfur.ru
ORCID ID: 0000-0002-6411-5988
Doctor of Chemical Sciences, Associate Professor, Department of Human Ecology and Bioelementology
Rússia, 6 Miklukho-Maklaya St, Moscow, 117198, Russian FederationBibliografia
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