Отправить статью по E-mail A Study of Nanoscale Profiling Modes of a Silicon Surface via Local Anodic Oxidation
- Авторы: Polyakova V.V.1, Smirnov V.A.1, Ageev O.A.1
-
Учреждения:
- Institute of Nanotechnologies, Electronics and Instrumentation, “Nanotechnologies” Research and Educational Centre
- Выпуск: Том 13, № 1-2 (2018)
- Страницы: 84-89
- Раздел: Article
- URL: https://journals.rcsi.science/2635-1676/article/view/220388
- DOI: https://doi.org/10.1134/S1995078018010111
- ID: 220388
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The nanoscale profiling modes of an (100) n-type silicon substrate surface through the local anodic oxidation (LAO) are studied. The influence of relative humidity and pulse voltage at LAO on the geometric parameters of silicon oxide nanostructures (SONs) and shaped profile nanostructures (SPNs) formed within the liquid etching of SONs is elucidated. It is shown that an increase in LAO voltage pulse amplitude from 10 to 20 V causes a gain in the SON height from 0.6 ± 0.2 to 2.0 ± 0.3 nm at a relative humidity of 70 ± 1%. The results can be applied for the design of technological processes in the element-base fabrication of silicon nanoelectronics using scanning probe nanotechnology.
Об авторах
V. Polyakova
Institute of Nanotechnologies, Electronics and Instrumentation, “Nanotechnologies” Research and Educational Centre
Автор, ответственный за переписку.
Email: vpolyakova@sfedu.ru
Россия, Taganrog, 347928
V. Smirnov
Institute of Nanotechnologies, Electronics and Instrumentation, “Nanotechnologies” Research and Educational Centre
Email: vpolyakova@sfedu.ru
Россия, Taganrog, 347928
O. Ageev
Institute of Nanotechnologies, Electronics and Instrumentation, “Nanotechnologies” Research and Educational Centre
Email: vpolyakova@sfedu.ru
Россия, Taganrog, 347928
Дополнительные файлы
