Graphene/Silicon Photodiode Prepared via Lamination and Its Properties
- Авторы: Timofeeva T.E.1, Timofeev V.B.1, Nikolaev D.V.1
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Учреждения:
- Institute of Physics and Technologies
- Выпуск: Том 13, № 3-4 (2018)
- Страницы: 130-133
- Раздел: Devices and Products Based on Nanomaterials and Nanotechnologies
- URL: https://journals.rcsi.science/2635-1676/article/view/220429
- DOI: https://doi.org/10.1134/S1995078018020179
- ID: 220429
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Аннотация
A simple technology is proposed for preparing a graphene/silicon photodiode with a Schottky barrier. CVD graphene is transferred to a polymer substrate via lamination. The polymer film with graphene is then glued to the surface of a silicon plate via thermal compression. The contacts are deposited on graphene and silicon with a silver paste. The photodiode obtained in this way has the following characteristics: sensitivity of 0.37 A/W, external quantum efficiency of 0.88, and normalized equivalent noise power of 1 pW/Hz1/2. These data are obtained for a wavelength of 520 nm. The range of electromagnetic radiation detected with the photodetector is 320–1100 nm.
Об авторах
T. Timofeeva
Institute of Physics and Technologies
Email: nertiv@rambler.ru
Россия, Yakutsk, 677000
V. Timofeev
Institute of Physics and Technologies
Автор, ответственный за переписку.
Email: nertiv@rambler.ru
Россия, Yakutsk, 677000
D. Nikolaev
Institute of Physics and Technologies
Email: nertiv@rambler.ru
Россия, Yakutsk, 677000
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