SYNAPTIC PLASTICITY OF MEMRISTIVE STRUCTURES BASED ON POLY-P-XYLYLENE
- Авторлар: Shvetsov B.S.1,2, Emelyanov A.V.2,3, Minnekhanov A.A.2, Nikiruy K.2,3, Nesmelov A.A.2, Martyshov M.N.1, Rylkov V.V.2,4, Demin V.A.2
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Мекемелер:
- Lomonosov Moscow State University
- National Research Center Kurchatov Institute
- Moscow Institute of Physics and Technology
- Fryazino Branch of Kotelnikov Institute of Radio Engineering and Electronics
- Шығарылым: Том 14, № 1-2 (2019)
- Беттер: 1-6
- Бөлім: Nanostructures, Nanotubes
- URL: https://journals.rcsi.science/2635-1676/article/view/220690
- DOI: https://doi.org/10.1134/S1995078019010105
- ID: 220690
Дәйексөз келтіру
Аннотация
Abstract—Neuromorphic computer networks (NCNs) with synaptic connections based on memristors can provide much greater efficiency in the hardware implementation of bio-inspired spiking neural networks than digital synaptic elements based on complementary technology. To achieve energy-efficient and, in the long-term, self-learning NCNs, the resistance of a memristor connecting pre- and postsynaptic neurons needs to be changeable according to local rules, e.g., according to the rules of spike-timing-dependent plasticity—STDP. The possibility of memristor training according to STDP rules was demonstrated by the example of Cu/poly-p-xylylene (PPX)/indium tin oxide (ITO) memristive structures, in which the top electrode (copper) acted as the presynaptic input, and the bottom (ITO), as the postsynaptic input. The optimal pulse amplitude and duration values are found for rectangular and triangular training pulses. The results open up prospects for creating autonomous NCNs capable of supervised and unsupervised learning to solve complex cognitive problems.
Авторлар туралы
B. Shvetsov
Lomonosov Moscow State University; National Research Center Kurchatov Institute
Хат алмасуға жауапты Автор.
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 119234; Moscow, 123182
A. Emelyanov
National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182; Moscow, 141701
A. Minnekhanov
National Research Center Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182
K. E. Nikiruy
National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182; Moscow, 141701
A. Nesmelov
National Research Center Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182
M. Martyshov
Lomonosov Moscow State University
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 119234
V. Rylkov
National Research Center Kurchatov Institute; Fryazino Branch of Kotelnikov Institute of Radio Engineering and Electronics
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182; Fryazino, 141190
V. Demin
National Research Center Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Ресей, Moscow, 123182
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