Surface Modification of Corundum Ceramics by Argon Ion Beam
- Авторы: Ghyngazov S.A.1, Kostenko V.1, Ovchinnikov V.V.2, Gushchina N.V.2, Makhinko F.F.2
-
Учреждения:
- National Research Tomsk Polytechnic University
- Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
- Выпуск: Том 10, № 2 (2019)
- Страницы: 438-444
- Раздел: New Technologies of Preparation and Treatment of Materials
- URL: https://journals.rcsi.science/2075-1133/article/view/207883
- DOI: https://doi.org/10.1134/S2075113319020199
- ID: 207883
Цитировать
Аннотация
The mechanical properties of near-surface layers of aluminum oxide ceramic treated with a continuous ion beam of argon are investigated. The phase and structural changes of the modified near-surface layers were analyzed by X-ray diffraction analysis and scanning electron microscopy, respectively. Samples for research were made from corundum plates used in microelectronics. Ion processing was carried out using an ILM-1 ion implanter equipped with a Pulsar-1M ion source based on a low-pressure glow discharge with a cold hollow cathode. Argon ions with energy of 30 keV and ion current density j = 300 μA/cm2 were used for the irradiation. Two irradiation modes with the fluences of 1016 and 1017 cm–2 were implemented. It was established that the ion treatment promotes the manifestation of the initial grain structure of a sample and increases the mechanical characteristics (modulus of elasticity and nanohardness) of near-surface layers of samples. According to the X-ray diffraction data, after the action of an ion beam, there is a decrease in the size of the coherent scattering region with respect to the initial state. The irradiation leads to an increase in the values of crystal lattice microstrains. Possible mechanisms of modifying the ceramic surface are discussed.
Об авторах
S. Ghyngazov
National Research Tomsk Polytechnic University
Автор, ответственный за переписку.
Email: ghyngazov@tpu.ru
Россия, Tomsk, 634050
V. Kostenko
National Research Tomsk Polytechnic University
Email: ffm1978@mail.ru
Россия, Tomsk, 634050
V. Ovchinnikov
Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: Vladimir@iep.uran.ru
Россия, Yekaterinburg, 620016
N. Gushchina
Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: gushchina@iep.uran.ru
Россия, Yekaterinburg, 620016
F. Makhinko
Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: ffm1978@mail.ru
Россия, Yekaterinburg, 620016
Дополнительные файлы
