Low-temperature oxidation of MoSi2–Si3N4 composites


Дәйексөз келтіру

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Аннотация

Composites in the MoSi2 + Si3N4 system containing 1.0, 2.5, and 5.0 wt % Si3N4 were synthesized by hot pressing at the temperature of 1650°C and the pressure of 30 MPa. Silicon nitride powders of two types of were used as reinforcing additives: one with isometric equiaxed crystals and one with fibrous structure. The samples were characterized by microstructural and phase analyses; the relative density and the flexural strength were determined. Composites with the flexural strength of up to 410 MPa were synthesized. The resistance to low-temperature oxidation of MoSi2 + Si3N4 composites in air at the temperature of 750°C was studied. The increase in the resistance to oxidation of composites with silicon nitride in air compared to pure molybdenum disilicide for both types of silicon nitride powders was established. For all the composites obtained, the parabolic oxidation rate constants were calculated.

Авторлар туралы

D. Titov

Baikov Institute of Metallurgy and Materials Science

Хат алмасуға жауапты Автор.
Email: mitytitov@gmail.com
Ресей, Moscow

A. Lysenkov

Baikov Institute of Metallurgy and Materials Science

Email: mitytitov@gmail.com
Ресей, Moscow

Yu. Kargin

Baikov Institute of Metallurgy and Materials Science

Email: mitytitov@gmail.com
Ресей, Moscow

V. Gorshkov

Institute of Structural Macrokinetics and Materials Science

Email: mitytitov@gmail.com
Ресей, Chernogolovka

M. Goldberg

Baikov Institute of Metallurgy and Materials Science

Email: mitytitov@gmail.com
Ресей, Moscow

N. Petrakova

Baikov Institute of Metallurgy and Materials Science

Email: mitytitov@gmail.com
Ресей, Moscow

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