Formation of thin catalytic WSex layer on graphite electrodes for activation of hydrogen evolution reaction in aqueous acid
- Authors: Grigoriev S.N.1, Fominski V.Y.2, Nevolin V.N.3, Romanov R.I.2, Volosova M.A.1, Irzhak A.V.4
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Affiliations:
- Moscow State University of Technology STANKIN
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Lebedev Physical Institute
- Institute of Microelectronics Technology and High Purity materials
- Issue: Vol 7, No 2 (2016)
- Pages: 285-291
- Section: New Technologies for Obtaining and Processing Materials
- URL: https://journals.rcsi.science/2075-1133/article/view/205003
- DOI: https://doi.org/10.1134/S2075113316020118
- ID: 205003
Cite item
Abstract
The possibility of obtaining new relatively inexpensive electrode materials to provide enhanced efficiency of hydrogen evolution reaction (HER) in an aqueous acid solution was investigated. For this purpose, the surface properties of cathodes made of microcrystalline graphite were modified by pulsed laser deposition of thin films of WSex. The structure, morphology, and chemical composition of the thin film coatings were varied by changing the deposition conditions and subsequent heat treatment. The compact and dense structure of the film in an amorphous and crystalline state did not result in a marked positive impact on the character of the HER process, which was investigated in 0.5 M H2SO4 solution at room temperature. Formation of thin layers consisting of nanocrystalline “petals” WSe2 caused an increase in cathodic current by more than 6 times (at a voltage of–150 mV), and the Tafel slope of the voltage vs. current curve was reduced by about 80 mV/dec. The conditions were determined to produce on the surface of the graphite cathode a high density of new catalytically active sites that formed on edges of molecular planes forming a layered structure characteristic of WSe2 nanocrystals.
About the authors
S. N. Grigoriev
Moscow State University of Technology STANKIN
Author for correspondence.
Email: sgrigor@stankin.ru
Russian Federation, Vadkovskii per. 3a, Moscow, 127005
V. Yu. Fominski
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: sgrigor@stankin.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409
V. N. Nevolin
Lebedev Physical Institute
Email: sgrigor@stankin.ru
Russian Federation, Leninskii pr. 53, Moscow, 119991
R. I. Romanov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: sgrigor@stankin.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409
M. A. Volosova
Moscow State University of Technology STANKIN
Email: sgrigor@stankin.ru
Russian Federation, Vadkovskii per. 3a, Moscow, 127005
A. V. Irzhak
Institute of Microelectronics Technology and High Purity materials
Email: sgrigor@stankin.ru
Russian Federation, ul. Akademika Osip’yana 6, Chernogolovka, Moscow oblast, 142432