Tuning the electronic properties of the fullerene C20 cage via silicon impurities

Аннотация

The fullerene C₂₀ represents one of the most active classes of nanostructures, and they have been widely used as active materials for important applications. In this study, we investigate and discuss the tuning of the electronic properties of the fullerene C₂₀ cage via various consternations and locations of silicon atoms. All calculations are based on the density functional theory (DFT) at the B3LYP/3-21G level through the Gaussian 09W program package. The optimized structures, density of state (DOS) analysis, total energies, dipole moments, HOMO energies, Fermi level energies, LUMO energies, energy gaps, and the work functions were performed and discussed. Our results show that the electronic properties of C₂₀ cage do not only depend on the silicon impurity concentrations, but also depend on the geometrical pattern of silicon impurities in the C₂₀ cage. The tuning of the electronic properties leads to significant changes in the charge transport and the absorption spectra for C₂₀ cage via engineering the energy gap. So, we suggest that substitutional impurities are the best viable option for enhancement of desired electronic properties of C₂₀ cage for using these structures in nanoelectronics and solar cell applications.