Features of the electrical and photoelectrical properties of nanocrystalline indium and zinc oxide films


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Electrical and photoelectrical properties of nanocrystalline zinc oxide and indium oxide films are studied. For these oxides the temperature dependences of conductance are observed to be consisting of two parts with different activation energy. Also photoconductivity relaxation of the oxides can be described by a sum of two exponential functions. The spectral dependencies of nanocrystalline zinc oxide and indium oxide photoconductivity are presented. The photoconductivity arises as samples are illuminated with energy less than band gap. The data are discussed on the basis of model by which the localized states in the band gap play major role.

作者简介

T. Belysheva

Karpov Institute of Physical Chemistry

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 103064

M. Ikim

Semenov Institute of Chemical Physics

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 117977

A. Il’in

Moscow State University; National Research Center “Kurchatov Institute”

编辑信件的主要联系方式.
Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123098

P. Kashkarov

Moscow State University; National Research Center “Kurchatov Institute”; Moscow University of Physics and Technology

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123098; Dolgoprudnyi, Moscow oblast, 141701

M. Martyshov

Moscow State University

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 119991

Y. Paltiel

Applied Physics Department, Center for Nano-Science and Nano-Technology

Email: as.ilin@physics.msu.ru
以色列, Jerusalem, 91904

L. Trakhtenberg

Semenov Institute of Chemical Physics

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 117977

N. Fantina

Moscow State University

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 119991

P. Forsh

Moscow State University; National Research Center “Kurchatov Institute”

Email: as.ilin@physics.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123098

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