Peculiarities of Crystal Growth of Linear Oligophenyls from Vapor

Мұқаба

Дәйексөз келтіру

Толық мәтін

Аннотация

The peculiarities of formation and growth of crystals of linear oligophenyls (from diphenyl to p-sexiphenyl) under conditions of physical vapor transport have been investigated. Two structural variants of horizontal growth furnaces were used to study the crystal growth processes: single-zone with a gradient temperature field (classic type) and with two temperature zones. Optimal conditions for growing crystals on a scale of 0.1 to 1 cm were determined for the studied compounds. It was found that under conditions of a two-zone temperature field, at certain temperature difference values between the hot and cold zones, it is possible to obtain larger crystals of better morphological quality compared to growth under conditions of a single-zone gradient thermal field. The crystal structure of the grown single crystalline films was investigated using X-ray diffraction methods.

Авторлар туралы

Artem Kulishov

Shubnikov Institute of Crystallography, KCC&Ph, NRC Kurchatov Institute

Хат алмасуға жауапты Автор.
Email: adakyla1255@gmail.com
Ресей, 17a Butlerov Str., Moscow, 117342, Russia

Valery Postnikov

Shubnikov Institute of Crystallography, KCC&Ph, NRC Kurchatov Institute

Email: postva@yandex.ru
Ресей, 17a Butlerov Str., Moscow, 117342, Russia

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© Kulishov A.A., Postnikov V.A., 2024

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