Films based on phases in a Si–C–N system. Part II. plasma chemical synthesis of SiCxNy:Н films from the mixture of bis(trimethylsilyl)ethylamine and hydrogen

Аннотация

Thin silicon carbonitride SiC_xN_y films are synthesized by means of plasma enhanced chemical vapor deposition using an organosilicon compound such as bis(trimethylsilyl)ethylamine EtN(SiMe₃)₂ as the precursor in a mixture with hydrogen. The chemical composition and properties of the films are characterized by a set of modern research methods such as IR, Raman, and energy dispersive spectroscopy; ellipsometry; scanning electron microscopy; and spectrophotometry. The growth rate, chemical composition, and optical properties of the films have been studied depending on the synthesis temperature in the range from 373 to 1073 K. It is found that the substrate temperature exerts a significant effect on the growth kinetics, surface morphology, physicochemical properties, and functional characteristics of the films. Low temperature SiC_xN_y films have high transparency in the visible and infrared regions of the spectrum. Varying the parameter of synthesis allows one to obtain layers with different values of the refractive index (1.50–2.50).