Two-Dimensional and Screw Growth of MoS2 Films in the Process of Chemical Deposition from the Gas Phase
- 作者: Romanov RI.1, Myakota D.I.1, Chuprik A.A.1, Novikov S.M.1, Lebedinskii Y.Y.1, Chernikova A.G.1, Markeev A.M.1
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隶属关系:
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 92, 编号 5 (2019)
- 页面: 596-601
- 栏目: Inorganic Synthesis and Industrial Inorganic Chemistry
- URL: https://journals.rcsi.science/1070-4272/article/view/216472
- DOI: https://doi.org/10.1134/S1070427219050021
- ID: 216472
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详细
The method of deposition from the gas phase is applied to the synthesis of thin films of molybdenum disulfide. It was established that varying the rate of temperature rise in the course of the synthesis affects the character of growth and the structure of the layers formed. With a decrease in the rate of temperature rise, a transition from standard two-dimensional to screw growth of MoS2 films is observed. MoS2 films produced as a result of screw growth have a high density of edge states, which makes them promising for use in catalysis.
作者简介
R Romanov
Moscow Institute of Physics and Technology (State University)
编辑信件的主要联系方式.
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
D. Myakota
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
A. Chuprik
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
S. Novikov
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
Yu. Lebedinskii
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
A. Chernikova
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
A. Markeev
Moscow Institute of Physics and Technology (State University)
Email: romanov.ri@piipt.ru
俄罗斯联邦, Dolgoprudny, 141701
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