Effect of a semiconductor filler and aluminum nanoparticles on the surface structures and dielectric properties of PVDF + TlInS2〈Al〉 composite materials

Аннотация

The results of a study of the temperature and frequency dependences of the dielectric permeability and dielectric loss of PVDF + TlInS₂ and PVDF + TlInS₂ + Al composites at frequencies of 10–10⁵ Hz and temperatures of 20–150°C and the effect of 50-nm aluminum nanoparticles on the dielectric properties of PVDF + x vol % TlInS₂ composite materials are described. It is revealed that an increase in the percentage of the TlInS₂ filler in the matrix leads to an increase in the dielectric permeability and dielectric loss of these materials. An increase in the amount of the PVDF + x vol % TlInS₂ + y vol % Al composites is also observed with an increase in the aluminum nanoparticle content in the composite; this effect leads to a change in the Maxwell–Wagner space-charge polarization. Under the effect of aluminum nanoparticles, the pattern of the frequency dispersion of the dielectric loss of the studied composites changes significantly.