Study of photocurrent in the two-dimensional n–p–n structure by scanning laser microscope

Аннотация

The photocurrent induced by the local excitation of the light beam focused up to 0.17 μm on the surface of a semiconductor element in the planar structure with two p–n junctions, that is, with the use of the so-called scanning laser microscopy technique, has been studied experimentally. The linear dependence of the photocurrent on the coordinate of the beam center is obtained. The high sensitivity of the structure enables to detect the displacement of the order of tens nanometers.