Multi-soliton method for removal of misfit dislocations from functional area of heterostructures


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Abstract

A theoretical model was developed for reduction of the density of misfit dislocations at boundaries of heterojunctions. The model is based on the repulsion of a multi-soliton chain and of a single dislocation, as a result of which the removal of the dislocation from the functional area of heterostructure occurs.

About the authors

M. M. Arakelyan

Yerevan State University

Author for correspondence.
Email: marakelyan@ysu.am
Armenia, Yerevan


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