Features of the Microstructure of the Surface Region of the Photoelectric Converter with a Porous Silicon Antireflection Film and an n+-p Junction Formed by Laser Radiation
- Авторы: Melnik N.N.1, Tregulov V.V.2, Rybin N.B.3, Stepanov V.A.2
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Учреждения:
- Lebedev Physical Institute
- Yesenin Ryazan State University
- Ryazan State Radio Engineering University
- Выпуск: Том 46, № 6 (2019)
- Страницы: 197-200
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/229012
- DOI: https://doi.org/10.3103/S1068335619060034
- ID: 229012
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Аннотация
The microstructure of the surface region of the silicon photoelectric converter with an n+-p junction and an antireflection porous silicon film is studied by scanning electron microscopy and Raman spectroscopy methods. The n+-p junction was formed by laser irradiation of the surface of a porous silicon film containing a phosphorus impurity. It is shown that laser irradiation causes partial recrystallization of the porous silicon film and the n+-p junction formation within silicon crystallites.
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Об авторах
N. Melnik
Lebedev Physical Institute
Автор, ответственный за переписку.
Email: melnik@sci.lebedev.ru
Россия, 53 Leninskii Pr., Moscow, 119991
V. Tregulov
Yesenin Ryazan State University
Email: melnik@sci.lebedev.ru
Россия, 46 Svobody St., Ryazan, 390000
N. Rybin
Ryazan State Radio Engineering University
Email: melnik@sci.lebedev.ru
Россия, 59/1 Gagarina St., Ryazan, 390005
V. Stepanov
Yesenin Ryazan State University
Email: melnik@sci.lebedev.ru
Россия, 46 Svobody St., Ryazan, 390000
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