Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells
- Autores: Nagaraja K.K.1,2, Telenkov M.P.1,2, Kazakov I.P.1, Savinov S.A.1, Mityagin Y.A.1,3
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Afiliações:
- Lebedev Physical Institute
- National University of Science and Technology “MISiS”
- National Research Nuclear University “MEPhI”
- Edição: Volume 44, Nº 3 (2017)
- Páginas: 72-76
- Seção: Article
- URL: https://journals.rcsi.science/1068-3356/article/view/228278
- DOI: https://doi.org/10.3103/S1068335617030058
- ID: 228278
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Resumo
This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.
Sobre autores
K. Nagaraja
Lebedev Physical Institute; National University of Science and Technology “MISiS”
Email: mityagin@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Leninskii pr. 4, Moscow, 119049
M. Telenkov
Lebedev Physical Institute; National University of Science and Technology “MISiS”
Email: mityagin@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Leninskii pr. 4, Moscow, 119049
I. Kazakov
Lebedev Physical Institute
Email: mityagin@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
S. Savinov
Lebedev Physical Institute
Email: mityagin@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991
Yu. Mityagin
Lebedev Physical Institute; National Research Nuclear University “MEPhI”
Autor responsável pela correspondência
Email: mityagin@sci.lebedev.ru
Rússia, Leninskii pr. 53, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
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