Restriction of a Number of Levels of Dimensional Quantization in Elements of Nanoelectronics
- 作者: Davydov V.N.1, Zadorozhny O.F.1, Karankevich O.A.1
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隶属关系:
- Tomsk State University of Control Systems and Radioelectronics
- 期: 卷 62, 编号 3 (2019)
- 页面: 499-504
- 栏目: Physics of Semiconductors and Dielectrics
- URL: https://journals.rcsi.science/1064-8887/article/view/241676
- DOI: https://doi.org/10.1007/s11182-019-01737-5
- ID: 241676
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详细
Realization of a criterion of dimensional quantization in quantum wells of various profiles is considered. It is established that there is the limit number of the discrete state of a free charge carrier in the well, above which the criterion of dimensional quantization is not fulfilled. It is shown that in quantum wells of rectangular and triangular profiles, the number of levels of dimensional quantization cannot exceed two or three. The result obtained is applicable to quantum wells, quantum wires, and quantum dots.
作者简介
V. Davydov
Tomsk State University of Control Systems and Radioelectronics
编辑信件的主要联系方式.
Email: dvn@fet.tusur.ru
俄罗斯联邦, Tomsk
O. Zadorozhny
Tomsk State University of Control Systems and Radioelectronics
Email: dvn@fet.tusur.ru
俄罗斯联邦, Tomsk
O. Karankevich
Tomsk State University of Control Systems and Radioelectronics
Email: dvn@fet.tusur.ru
俄罗斯联邦, Tomsk
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